Part Number

IPL60R299CP

Manufacturer

Description
MOSFET N-CH 650V 11.1A 4VSON
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPL60R299CP
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11.1A (Tc)
Rds On (Max) @ Id, Vgs299 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) @ Vgs22nC @ 10V
Input Capacitance (Ciss) @ Vds1100pF @ 100V
Power - Max96W
Mounting TypeSurface Mount
Package / Case4-TSFN Exposed Pad
Supplier Device PackagePG-VSON-4
Other NamesIPL60R299CP-ND
IPL60R299CPAUMA1
SP000841896
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