Part Number

IPI80N06S2L-11

Manufacturer

Description
MOSFET N-CH 55V 80A TO262-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPI80N06S2L-11
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs11 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2V @ 93µA
Gate Charge (Qg) @ Vgs80nC @ 10V
Input Capacitance (Ciss) @ Vds2075pF @ 25V
Power - Max158W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackagePG-TO262-3
Other NamesIPI80N06S2L11AKSA1
SP000218176
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