Part Number

IPI65R660CFD

Manufacturer

Description
MOSFET N-CH 650V 6A TO262
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPI65R660CFD
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs660 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 200µA
Gate Charge (Qg) @ Vgs22nC @ 10V
Input Capacitance (Ciss) @ Vds615pF @ 100V
Power - Max62.5W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackagePG-TO262-3
Other NamesIPI65R660CFDXKSA1
SP000861696
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