- Part Number
IPI65R110CFD
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 650V 31.2A TO262
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPI65R110CFD, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPI65R110CFD
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | |
| Gate Charge (Qg) @ Vgs | 118nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3240pF @ 100V | |
| Power - Max | 277.8W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Supplier Device Package | PG-TO262-3 | |
| Other Names | IPI65R110CFDXKSA1 SP000896398 | |
| call me | [email protected] | |
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