Part Number

IPI072N10N3 G

Manufacturer

Description
MOSFET N-CH 100V 80A TO262-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPI072N10N3 G
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs7.2 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3.5V @ 90µA
Gate Charge (Qg) @ Vgs68nC @ 10V
Input Capacitance (Ciss) @ Vds4910pF @ 50V
Power - Max150W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackagePG-TO262-3
Other NamesIPI072N10N3G
IPI072N10N3GXKSA1
SP000469900
SP000680674
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