- Part Number
IPI04CN10N G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 100V 100A TO262-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IPI04CN10N G
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 13800pF @ 50V | |
| Power - Max | 300W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Supplier Device Package | PG-TO262-3 | |
| Other Names | SP000398084 SP000680660 | |
| call me | [email protected] | |
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