Part Number

IPD65R250C6XTMA1

Manufacturer

Description
MOSFET N-CH 650V 16.1A TO-252
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPD65R250C6XTMA1
PackagingCut Tape (CT)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C16.1A (Tc)
Rds On (Max) @ Id, Vgs250 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 400µA
Gate Charge (Qg) @ Vgs44nC @ 10V
Input Capacitance (Ciss) @ Vds950pF @ 100V
Power - Max208.3W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Other NamesIPD65R250C6XTMA1CT
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