- Part Number
IPD50R650CE
- Manufacturer
Infineon Technologies
- Description
- MOSFET N CH 500V 6.1A PG-TO252
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPD50R650CE, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPD50R650CE
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) | |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 1.8A, 13V | |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 342pF @ 100V | |
| Power - Max | 47W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | PG-TO252-3 | |
| Other Names | IPD50R650CEBTMA1 IPD50R650CETR SP000992078 | |
| call me | [email protected] | |
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