Part Number

IPD35N10S3L-26

Manufacturer

Description
MOSFET N-CH 100V 35A TO252-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPD35N10S3L-26
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs24 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.4V @ 39µA
Gate Charge (Qg) @ Vgs39nC @ 10V
Input Capacitance (Ciss) @ Vds2700pF @ 25V
Power - Max71W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Other NamesIPD35N10S3L26ATMA1
SP000386184
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