- Part Number
IPD26N06S2L-35
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 55V 30A TO252-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPD26N06S2L-35, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPD26N06S2L-35
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 26µA | |
| Gate Charge (Qg) @ Vgs | 24nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 621pF @ 25V | |
| Power - Max | 68W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | PG-TO252-3 | |
| Other Names | IPD26N06S2L35ATMA1 SP000252165 | |
| call me | [email protected] | |
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