Part Number

IPD25CN10N G

Manufacturer

Description
MOSFET N-CH 100V 35A TO252-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPD25CN10N G
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs25 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 39µA
Gate Charge (Qg) @ Vgs31nC @ 10V
Input Capacitance (Ciss) @ Vds2070pF @ 50V
Power - Max71W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Other NamesIPD25CN10N G-ND
IPD25CN10NG
IPD25CN10NGBUMA1
SP000096456
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