- Part Number
IPD12CN10N G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 100V 67A TO252-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPD12CN10N G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPD12CN10N G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) | |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 67A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 83µA | |
| Gate Charge (Qg) @ Vgs | 65nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4320pF @ 50V | |
| Power - Max | 125W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | PG-TO252-3 | |
| Other Names | IPD12CN10NGBUMA1 SP000096476 | |
| call me | [email protected] | |
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