Part Number

IPB65R225C7ATMA1

Manufacturer

Description
MOSFET N-CH 650V 11A TO-263-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPB65R225C7ATMA1
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs225 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id4V @ 240µA
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds996pF @ 400V
Power - Max63W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263
Other NamesIPB65R225C7ATMA1TR
SP000992480
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