- Part Number
IPB120N06S4-H1
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 60V 120A TO263-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IPB120N06S4-H1
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Rds On (Max) @ Id, Vgs | 2.1 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 21900pF @ 25V | |
| Power - Max | 250W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | PG-TO263-3-2 | |
| Other Names | IPB120N06S4H1ATMA1 SP000396274 | |
| call me | [email protected] | |
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