- Part Number
IPB108N15N3 G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 150V 83A TO263-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPB108N15N3 G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPB108N15N3 G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) | |
| Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 83A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 160µA | |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3230pF @ 75V | |
| Power - Max | 214W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | PG-TO263-2 | |
| Other Names | IPB108N15N3 G-ND IPB108N15N3G IPB108N15N3GATMA1 SP000677862 | |
| call me | [email protected] | |
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