- Part Number
IPB049NE7N3 G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 75V 80A TO263-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPB049NE7N3 G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPB049NE7N3 G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 75V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA | |
| Gate Charge (Qg) @ Vgs | 68nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4750pF @ 37.5V | |
| Power - Max | 150W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | PG-TO263-3 | |
| Other Names | IPB049NE7N3 G-ND IPB049NE7N3G IPB049NE7N3GATMA1 SP000641752 | |
| call me | [email protected] | |
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