- Part Number
IPB039N10N3 G E8187
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 100V 160A TO263-7
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IPB039N10N3 G E8187
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 160µA | |
| Gate Charge (Qg) @ Vgs | 117nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 8410pF @ 50V | |
| Power - Max | 214W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| Supplier Device Package | PG-TO263-7 | |
| Other Names | IPB039N10N3 G E8187-ND IPB039N10N3GE8187ATMA1 SP000939340 | |
| call me | [email protected] | |
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