- Part Number
IPB019N08N3 G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 80V 180A TO263-7
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IPB019N08N3 G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 80V | |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA | |
| Gate Charge (Qg) @ Vgs | 206nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 14200pF @ 40V | |
| Power - Max | 300W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| Supplier Device Package | PG-TO263-7 | |
| Other Names | IPB019N08N3 G-ND IPB019N08N3G IPB019N08N3GATMA1 Q4136793 SP000444110 | |
| call me | [email protected] | |
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