Part Number

IPB019N06L3 G

Manufacturer

Description
MOSFET N-CH 60V 120A TO263-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPB019N06L3 G
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.9 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 196µA
Gate Charge (Qg) @ Vgs166nC @ 4.5V
Input Capacitance (Ciss) @ Vds28000pF @ 30V
Power - Max250W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-2
Other NamesIPB019N06L3 G-ND
IPB019N06L3G
IPB019N06L3GATMA1
SP000453020
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