- Part Number
IPB011N04N G
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 40V 180A TO263-7
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPB011N04N G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPB011N04N G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.1 mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 200µA | |
| Gate Charge (Qg) @ Vgs | 250nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 20000pF @ 20V | |
| Power - Max | 250W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | |
| Supplier Device Package | PG-TO263-7-3 | |
| Other Names | IPB011N04NGATMA1 SP000388298 | |
| call me | [email protected] | |
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