Part Number

IPB011N04L G

Manufacturer

Description
MOSFET N-CH 40V 180A TO263-7
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPB011N04L G
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs1.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2V @ 200µA
Gate Charge (Qg) @ Vgs346nC @ 10V
Input Capacitance (Ciss) @ Vds29000pF @ 20V
Power - Max250W
Mounting TypeSurface Mount
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device PackagePG-TO263-7-3
Other NamesIPB011N04L G-ND
IPB011N04L GTR
IPB011N04LG
IPB011N04LGATMA1
SP000391498
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