IDH08G65C5

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Specifications of IDH08G65C5

Packaging	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	8A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 8A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	280µA @ 650V
Capacitance @ Vr, F	250pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	PG-TO220-2
Operating Temperature - Junction	-55°C ~ 175°C
Other Names	IDH08G65C5XKSA1 SP000925204
call me	[email protected]

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