- Part Number
HN3C10FUTE85LF
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- TRANSISTOR NPN US6
- Category
- Discrete Semiconductor Products
- Family
- RF Transistors (BJT)
- To learn about the specification of HN3C10FUTE85LF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of HN3C10FUTE85LF
| Packaging | Cut Tape (CT) | |
| Transistor Type | 2 NPN (Dual) | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 7GHz | |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz | |
| Gain | 11.5dB | |
| Power - Max | 200mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 20mA, 10V | |
| Current - Collector (Ic) (Max) | 80mA | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 | |
| Other Names | HN3C10FUTE85LFCT | |
| call me | [email protected] | |
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