- Part Number
GT60N321(Q)
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- IGBT 1000V 60A 170W TO3P LH
- Category
- Discrete Semiconductor Products
- Family
- IGBTs - Single
- To learn about the specification of GT60N321(Q), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of GT60N321(Q)
| Packaging | Tube | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 1000V | |
| Current - Collector (Ic) (Max) | 60A | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A | |
| Power - Max | 170W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | 330ns/700ns | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | 2.5µs | |
| Package / Case | TO-3PL | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(LH) | |
| call me | [email protected] | |
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