GT30J324(Q)

To learn about the specification of GT30J324(Q), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add GT30J324(Q) with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of GT30J324(Q).
We are offering GT30J324(Q) for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of GT30J324(Q)

Packaging	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	30A
Current - Collector Pulsed (Icm)	60A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Power - Max	170W
Switching Energy	1mJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	90ns/300ns
Test Condition	300V, 30A, 24 Ohm, 15V
Reverse Recovery Time (trr)	60ns
Package / Case	TO-3P-3, SC-65-3
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
call me	[email protected]

GT30J324(Q) Related Products

Toshiba Semiconductor & Storage