- Part Number
GA10JT12-263
- Manufacturer
GeneSiC Semiconductor
- Description
- TRANS SJT 1200V 25A
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of GA10JT12-263, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of GA10JT12-263
| Packaging | Tube | |
| FET Type | Silicon Carbide, Normally Off | |
| FET Feature | Super Junction | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 1403pF @ 800V | |
| Power - Max | 170W | |
| Mounting Type | Surface Mount | |
| Package / Case | - | |
| Supplier Device Package | - | |
| Other Names | 1242-1186 GA10JT12-220ISO GA10JT12220ISO | |
| call me | [email protected] | |
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