Part Number

FQI10N20CTU

Manufacturer

Description
MOSFET N-CH 200V 9.5A I2PAK
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of FQI10N20CTU
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Rds On (Max) @ Id, Vgs360 mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs26nC @ 10V
Input Capacitance (Ciss) @ Vds510pF @ 25V
Power - Max72W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK
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