Part Number

FQE10N20LCTU

Manufacturer

Description
MOSFET N-CH 200V 4A TO-126
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of FQE10N20LCTU
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs360 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) @ Vgs19nC @ 5V
Input Capacitance (Ciss) @ Vds490pF @ 25V
Power - Max12.8W
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageTO-126
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