- Part Number
EPC8009ENGR
- Manufacturer
EPC
- Description
- TRANS GAN 65V 4.1A BUMPED DIE
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of EPC8009ENGR, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of EPC8009ENGR
| Packaging | Tray | |
| FET Type | GaNFET N-Channel, Gallium Nitride | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 65V | |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 138 mOhm @ 500mA, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 0.38nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 47pF @ 32.5V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Other Names | 917-EPC8009ENGR EPC8009ENGG | |
| call me | [email protected] | |
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