- Part Number
EPC8008ENGR
- Manufacturer
EPC
- Description
- TRANS GAN 40V 2.7A BUMPED DIE
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of EPC8008ENGR, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
- To process your RFQ, please add EPC8008ENGR with quantity into BOM.
- Omoelec.com does NOT require any registration to request a quote of EPC8008ENGR.
- We are offering EPC8008ENGR for competitive price in the global market, please send us a quote request for pricing. Thank you!
Quick Order
Specifications of EPC8008ENGR
| Packaging | Tray | |
| FET Type | GaNFET N-Channel, Gallium Nitride | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) | |
| Rds On (Max) @ Id, Vgs | 325 mOhm @ 500mA, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 0.18nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 25pF @ 20V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Other Names | 917-EPC8008ENGR | |
| call me | [email protected] | |
EPC8008ENGR Related Products
IRF510
MOSFET N-CH 100V 5.6A TO-220AB
ZVN4424GTA
MOSFET N-CH 240V 500MA SOT223
IRF9510
MOSFET P-CH 100V 4A TO-220AB
IRFD9220
MOSFET P-CH 200V 0.56A 4-DIP
IRF840
MOSFET N-CH 500V 8A TO-220AB
IRFD110
MOSFET N-CH 100V 1A 4-DIP
IRFD9113
MOSFET P-CH 60V 600MA 4-DIP
IRFD210
MOSFET N-CH 200V 600MA 4-DIP
IRFD9110
MOSFET P-CH 100V 0.7A 4-DIP
IRFD9120
MOSFET P-CH 100V 1A 4-DIP
IRF9630
MOSFET P-CH 200V 6.5A TO-220AB
IRF610
MOSFET N-CH 200V 3.3A TO-220AB
