- Part Number
EPC2101ENG
- Manufacturer
EPC
- Description
- TRANS GAN 2N-CH 60V BUMPED DIE
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of EPC2101ENG, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of EPC2101ENG
| Packaging | Tray | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A | |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA | |
| Gate Charge (Qg) @ Vgs | 2.7nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 300pF @ 30V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Other Names | 917-EPC2101ENG EPC2101ENGR_H5 EPC2101ENGRH5 | |
| call me | [email protected] | |
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