Part Number

EPC2021ENG

Manufacturer

Description
TRANS GAN 80V 60A BUMPED DIE
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of EPC2021ENG
PackagingTray
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Rds On (Max) @ Id, Vgs2.5 mOhm @ 29A, 5V
Vgs(th) (Max) @ Id2.5V @ 14mA
Gate Charge (Qg) @ Vgs15nC @ 5V
Input Capacitance (Ciss) @ Vds1700pF @ 40V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Other Names917-EPC2021ENG
EPC2021ENGRB3
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