Packaging | Tray | |
FET Type | GaNFET N-Channel, Gallium Nitride | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) | |
Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 31A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 16mA | |
Gate Charge (Qg) @ Vgs | 16nC @ 5V | |
Input Capacitance (Ciss) @ Vds | 1800pF @ 30V | |
Power - Max | - | |
Mounting Type | Surface Mount | |
Package / Case | Die | |
Supplier Device Package | Die | |
Other Names | 917-EPC2020ENG EPC2020ENGRB2 | |
call me | [email protected] |
MOSFET N-CH 100V 5.6A TO-220AB
MOSFET N-CH 240V 500MA SOT223
MOSFET P-CH 100V 4A TO-220AB
MOSFET P-CH 200V 0.56A 4-DIP
MOSFET N-CH 500V 8A TO-220AB
MOSFET N-CH 100V 1A 4-DIP
MOSFET P-CH 60V 600MA 4-DIP
MOSFET N-CH 200V 600MA 4-DIP
MOSFET P-CH 100V 0.7A 4-DIP
MOSFET P-CH 100V 1A 4-DIP
MOSFET P-CH 200V 6.5A TO-220AB
MOSFET N-CH 200V 3.3A TO-220AB