Part Number

EPC2018

Manufacturer

Description
TRANS GAN 150V 12A BUMPED DIE
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of EPC2018
PackagingTape & Reel (TR)
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs25 mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) @ Vgs7.5nC @ 5V
Input Capacitance (Ciss) @ Vds540pF @ 100V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie
Other Names917-1034-2
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