- Part Number
EPC2012
- Manufacturer
EPC
- Description
- TRANS GAN 200V 3A BUMPED DIE
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of EPC2012, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of EPC2012
| Packaging | Cut Tape (CT) | |
| FET Type | GaNFET N-Channel, Gallium Nitride | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) | |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 1.8nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 145pF @ 100V | |
| Power - Max | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Other Names | 917-1017-1 | |
| call me | [email protected] | |
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