Part Number

EMG8T2R

Manufacturer

Description
TRANS 2NPN PREBIAS 0.15W EMT5
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of EMG8T2R
PackagingTape & Reel (TR)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / Case6-SMD (5 Leads), Flat Lead
Supplier Device PackageEMT5
Other NamesEMG8T2RTR
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