Part Number

EMG3T2R

Manufacturer

Description
TRANS 2NPN PREBIAS 0.15W EMT3
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of EMG3T2R
PackagingTape & Reel (TR)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA (ICBO)
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageEMT3
Other NamesEMG3T2R-ND
EMG3T2RTR
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