Part Number

EMG2DXV5T1G

Manufacturer

Description
TRANS 2NPN PREBIAS 0.23W SOT553
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of EMG2DXV5T1G
PackagingTape & Reel (TR)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max230mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageSOT-553
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