Part Number

EMF5XV6T5G

Manufacturer

Description
TRANS NPN PREBIAS/PNP SOT563
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of EMF5XV6T5G
PackagingTape & Reel (TR)
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Other NamesEMF5XV6T5G-ND
EMF5XV6T5GOSTR
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