Part Number

EMD29T2R

Manufacturer

Description
TRANS NPN/PNP PREBIAS 0.12W EMT6
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Arrays, Pre-Biased

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Specifications of EMD29T2R
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)50V, 12V
Resistor - Base (R1) (Ohms)1k, 10k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V / 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz, 260MHz
Power - Max120mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
Other NamesEMD29T2R-ND
EMD29T2RTR
Q3614586
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