EMB10T2R

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Specifications of EMB10T2R

Packaging	Tape & Reel (TR)
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz
Power - Max	150mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	EMT6
Other Names	EMB10T2R-ND EMB10T2RTR
call me	[email protected]

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