DTB113ZSTP

To learn about the specification of DTB113ZSTP, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add DTB113ZSTP with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of DTB113ZSTP.
We are offering DTB113ZSTP for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of DTB113ZSTP

Packaging	Tape & Box (TB)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200MHz
Power - Max	300mW
Mounting Type	Through Hole
Package / Case	SC-72 Formed Leads
Supplier Device Package	SPT
call me	[email protected]

DTB113ZSTP Related Products

Rohm Semiconductor