- Part Number
DMG4N65CT
- Manufacturer
Diodes Incorporated
- Description
- MOSFET N CH 650V 4A TO220-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of DMG4N65CT, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of DMG4N65CT
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 13.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 900pF @ 25V | |
| Power - Max | 2.19W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220-3 | |
| Other Names | DMG4N65CTDI | |
| call me | [email protected] | |
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