- Part Number
CSD25213W10
- Manufacturer
Texas Instruments
- Description
- MOSFET P-CH 20V 1.6A 4DSBGA
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of CSD25213W10, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of CSD25213W10
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) | |
| Rds On (Max) @ Id, Vgs | 47 mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 2.9nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 478pF @ 10V | |
| Power - Max | 1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-UFBGA, DSBGA | |
| Supplier Device Package | 4-DSBGA (1x1) | |
| Other Names | 296-40004-2 CSD25213W10-ND | |
| call me | [email protected] | |
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