- Part Number
C2M1000170D
- Manufacturer
Cree Inc.
- Description
- MOSFET N-CH 1700V 4.9A TO247
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of C2M1000170D
| Packaging | Tube | |
| FET Type | SiCFET N-Channel, Silicon Carbide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) | |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 2A, 20V | |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 13nC @ 20V | |
| Input Capacitance (Ciss) @ Vds | 191pF @ 1000V | |
| Power - Max | 69W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 | |
| call me | [email protected] | |
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