Part Number

C2M0280120D

Manufacturer

Description
MOSFET N-CH 1200V 10A TO-247-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of C2M0280120D
PackagingTube
FET TypeSiCFET N-Channel, Silicon Carbide
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs370 mOhm @ 6A, 20V
Vgs(th) (Max) @ Id2.8V @ 1.25mA (Typ)
Gate Charge (Qg) @ Vgs20.4nC @ 20V
Input Capacitance (Ciss) @ Vds259pF @ 1000V
Power - Max62.5W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
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