Packaging | Bulk | |
FET Type | SiCFET N-Channel, Silicon Carbide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 20A, 20V | |
Vgs(th) (Max) @ Id | 4V @ 5mA | |
Gate Charge (Qg) @ Vgs | 62nC @ 5V | |
Input Capacitance (Ciss) @ Vds | 950pF @ 1000V | |
Power - Max | 192W | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Supplier Device Package | TO-247-3 | |
call me | [email protected] |
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