Part Number

C2M0080120D

Manufacturer

Description
MOSFET N-CH 1200V 31.6A TO247
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of C2M0080120D
PackagingBulk
FET TypeSiCFET N-Channel, Silicon Carbide
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Rds On (Max) @ Id, Vgs98 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4V @ 5mA
Gate Charge (Qg) @ Vgs62nC @ 5V
Input Capacitance (Ciss) @ Vds950pF @ 1000V
Power - Max192W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
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