Packaging | Tube | |
FET Type | SiCFET N-Channel, Silicon Carbide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
Rds On (Max) @ Id, Vgs | 52 mOhm @ 40A, 20V | |
Vgs(th) (Max) @ Id | 2.8V @ 10mA | |
Gate Charge (Qg) @ Vgs | 115nC @ 20V | |
Input Capacitance (Ciss) @ Vds | 1893pF @ 1000V | |
Power - Max | 330W | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Supplier Device Package | TO-247-3 | |
call me | [email protected] |
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