- Part Number
BSZ180P03NS3E G
- Manufacturer
Infineon Technologies
- Description
- MOSFET P-CH 30V 39.6A TSDSON-8
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of BSZ180P03NS3E G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of BSZ180P03NS3E G
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 39.5A (Tc) | |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 1.9V @ 48µA | |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2220pF @ 15V | |
| Power - Max | 2.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PG-TSDSON-8 (3.3x3.3) | |
| Other Names | BSZ180P03NS3EGATMA1 SP000709740 | |
| call me | [email protected] | |
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