- Part Number
BSP322P L6327
- Manufacturer
Infineon Technologies
- Description
- MOSFET P-CH 100V 1A SOT-223
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of BSP322P L6327, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of BSP322P L6327
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) | |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 380µA | |
| Gate Charge (Qg) @ Vgs | 16.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 372pF @ 25V | |
| Power - Max | 1.8W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Supplier Device Package | PG-SOT223-4 | |
| Other Names | BSP322PL6327HTSA1 SP000212229 | |
| call me | [email protected] | |
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